US 2019/0355767 A1 · MANUFACTURING METHOD FOR TFT ARRAY SUBSTRATE AND TFT ARRAY SUBSTRATE

Abstract

The invention provides a manufacturing method for TFT array substrate and TFT array substrate. The manufacturing method forms a first buffer layer on the substrate; the first buffer layer is disposed with a plurality of arc protrusions or a plurality of arc recesses; then an a-Si layer is formed on the second buffer layer which is formed on the first buffer layer; in the process of forming a polysilicon layer by performing ELA on the a-Si layer, the arc protrusions or the arc recesses can change the optical path of the laser to form an energy gradient in the a-Si layer, so as to increase the grain size in the formed polysilicon layer, reduce the number of grain boundaries, improve the carrier mobility of the TFT device, and improve the electrical properties of the TFT device.

Claims10

Dependent claims

A manufacturing method for thin film transistor (TFT) array substrate, comprising:

providing a substrate;
forming a first buffer layer on the substrate;
the first buffer layer being disposed with a plurality of arc protrusions or a plurality of arc recesses;
forming a second buffer layer on the first buffer layer;
forming an amorphous silicon (a-Si) layer on the second buffer layer, performing an excimer laser annealing (ELA) on the a-Si layer to form a polysilicon layer;
and
patterning the polysilicon layer to form a plurality of active layers respectively located above the plurality of arc protrusions or the plurality of arc recesses.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/098,441Filed 18 Sep 2018

Priority

CN 201810488942.721 May 2018

Published

21 Nov 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs
H10D 86/0229
Comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials: characterised by control of the annealing or…
H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon

Manufacturing method for tft array substrate and tft array substrate

Life of this patent

Manufacturing method for tft array substrate and tft array substrate

Life of this patent

Abstract

Claims10