Flexible display panel
AssigneesSamsung Display Co., Ltd., Korea Advanced Institute of Science and Technology
InventorsJun Namkung, Seung Min Jane Han, Youbin Kim
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Abstract
A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 Å, and each of the first silicon oxide layers may have a thickness less than or equal to about 650 Å.
Claims15
A flexible display panel comprising:
- a base member including a bending area and a peripheral area adjacent to the bending area;
- a barrier layer on the base member;
- and
- a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
- wherein the barrier layer includes at least one first silicon nitride layer overlapped with the bending area, at least one first silicon oxide layer overlapped with the bending area, at least one second silicon nitride layer overlapped with the peripheral area, and at least one second silicon oxide layer overlapped with the at least one second silicon nitride layer, and
- wherein a total thickness of the at least one second silicon nitride layer is greater than a total thickness of the at least one first silicon nitride layer.
A flexible display panel comprising:
- a base member including a bending area and a peripheral area adjacent to the bending area;
- a barrier layer on the base member;
- and
- a pixel on the barrier layer and including a thin film transistor and a display element connected to the thin film transistor,
- wherein the barrier layer includes at least one silicon nitride layer and at least one silicon oxide layer overlapped with the at least one silicon nitride layer,
- wherein a total thickness of the at least one silicon nitride layer in the peripheral area is greater than a total thickness of the at least one silicon nitride layer in the bending area.
Dependencies are inferred from the claim text.