Display panel and method of manufacturing the same

A display panel, comprising:

• a substrate;
• and
• a first layer of wires disposed on the substrate, wherein a lower portion of the first layer of wires comprises a first high attachment metal layer, an upper portion of the first layer of wires comprises a second high attachment metal layer, a middle of the first layer of wires comprises an intermediate electroconductive layer, and the first layer of wires are connected to a column scan driver of the display panel;
• wherein a thickness of the intermediate electroconductive layer is greater than a thickness of the first high attachment metal layer and a thickness of the second high attachment metal layer;
• a width of a bottom portion of the intermediate electroconductive layer is greater than a width of a top portion of the intermediate electroconductive layer, a width of the first high attachment metal layer is the same as the width of the bottom portion of the intermediate electroconductive layer, a width of the second high attachment metal layer is the same as the width of the top portion of the intermediate electroconductive layer;
• the intermediate electroconductive layer is made of copper, aluminum, silver, gold, chromium, molybdenum, or any or their alloys;
• and the first high attachment metal layer and the second high attachment metal layer are made of molybdenum or a molybdenum alloy;
• wherein an insulating layer is disposed on a wire segment of a gate, a semiconductor layer corresponding to the wire segment of the gate is disposed on the insulating layer, a source and a drain of a thin film transistor separated from each other are disposed on two ends of the semiconductor layer, a trench is disposed between the source and the drain, and a bottom portion of the trench is the semiconductor layer;
• wherein the first layer of wires are integrally covered with the first high attachment metal layer and the second high attachment metal layer, the insulating layer is disposed on the first layer of wires, the first layer of wires comprise the wire segment of the gate disposed on the thin film transistor, the semiconductor layer corresponding to the wire segment of the gate is disposed on the insulating layer, the source and the drain of the thin film transistor separated from each other are disposed on two ends of the semiconductor layer, the trench is disposed between the source and the drain, and the bottom portion of the trench is the semiconductor layer.