US 2019/0355732 A1 · METHOD OF MANUFACTURING MEMORY STRUCTURE

Abstract

A manufacturing method of a memory structure including the following steps is provided. A memory cell structure is formed on a substrate. The memory cell structure has a first side and a second side opposite to each other. A protective layer structure covering the memory cell structure is formed. The material of the protective layer structure is nitride. The protective layer structure is a continuous structure. The height of the protective layer structure adjacent to the second side of the memory cell structure is greater than the height of the protective layer structure adjacent to the first side of the memory cell structure.

Claims8

Dependent claims

A manufacturing method of a memory structure, comprising:

forming a memory cell structure on a substrate, wherein the memory cell structure has a first side and a second side opposite to each other;
and
forming a protective layer structure covering the memory cell structure, wherein
a material of the protective layer structure is nitride,
the protective layer structure is a continuous structure, and
a height of the protective layer structure adjacent to the second side of the memory cell structure is greater than a height of the protective layer structure adjacent to the first side of the memory cell structure.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/529,815Filed 2 Aug 2019

Priority

CN 201710545488.X6 Jul 2017

Published

21 Nov 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification23 codes

H10B 41/30
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the memory core region
H10D 30/0411
Of FETs having insulated gates [IGFET]: of FETs having floating gates
H10D 30/68
Insulated-gate field-effect transistors [IGFET]: floating-gate IGFETs
H10D 30/6891
Floating-gate IGFETs: characterised by the shapes, relative sizes or dispositions of the floating gate electrode

Method of manufacturing memory structure

Life of this patent

Method of manufacturing memory structure

Life of this patent

Abstract

Claims8