Integrated Circuits with Contacting Gate Structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy Liaw
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Abstract
Examples of an integrated circuit with a contacting gate structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a memory cell that includes a plurality of fins and a gate extending over a first fin of the plurality of fins and a second fin of the plurality of fins. The gate includes a gate electrode that physically contacts the first fin and a gate dielectric disposed between the gate electrode and the second fin. In some such examples, the first fin includes a source/drain region and a doped region that physically contacts the gate electrode.
Claims22
An integrated circuit device comprising:
- a memory cell including:
- a plurality of fins;
- and
- a gate structure extending over a first fin of the plurality of fins and a second fin of the plurality of fins, wherein the gate structure includes:
- a first conductive region that physically contacts the first fin;
- and
- a second conductive region disposed over a gate dielectric interposed between the second conductive region and the second fin.
(canceled)
A device comprising:
- a first transistor disposed on a first fin;
- a second transistor disposed on a second fin;
- and
- a gate electrode disposed such that a first portion is over the first fin and a second portion is over the second fin, wherein:
- the second transistor includes a gate dielectric disposed between the second portion of the gate electrode and the second fin;
- and
- the first portion of the gate electrode physically contacts the first fin to couple the first transistor to the second transistor.
18-20. (canceled)
An integrated circuit, comprising:
- a first fin structure extending longitudinally in a first direction;
- a second fin structure extending longitudinally in the first direction, the second fin structure being spaced apart from the first fin structure in a second direction, the second direction being substantially perpendicular to the first direction;
- a gate structure extending longitudinally in the second direction, the gate structure engaging a portion of the first fin structure and a portion of the second fin structure, the gate structure including:
- a contact region in physical contact with the portion of the first fin structure;
- and
- a gate electrode region in physical contact with a gate dielectric layer, the gate dielectric layer conformally lining the portion of the second fin structure, the gate dielectric layer being interposed between the portion of the second fin structure and the gate electrode region of the gate electrode.
Dependencies are inferred from the claim text.