Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming an active structure including a plurality of active patterns, a device isolation layer between the active patterns, and a gate structure across the active patterns and extending in a first direction;
• forming a first mask pattern on the active structure;
• and
• forming a trench by using the first mask pattern as an etching mask to pattern the active structure,
• wherein forming the first mask pattern comprises:
• forming in a first mask layer a plurality of first openings extending in a second direction intersecting the first direction;
• and
• forming in the first mask layer a plurality of second openings extending in the first direction.

A semiconductor device, comprising:

• an active structure comprising an active pattern and a gate structure, wherein the active pattern comprises a first impurity region and a second impurity region, and wherein the gate structure between the first and second impurity regions and extends in a first direction;
• a trench defining a pillar body in an upper portion of the active structure;
• and
• a conductive pattern extending in a second direction on the active structure and electrically connected to the first impurity region exposed to the trench, the second direction intersecting the first direction,
• wherein the pillar body comprises a first pillar, a second pillar, and a third pillar,
• wherein the first to third pillars are spaced apart from each other in a third direction intersecting the first and second directions, and
• wherein a minimum distance between the first and second pillars is substantially the same as a minimum distance between the second and third pillars.