Hybrid semiconductor transistor structure and manufacturing method for the same

A method for forming a hybrid semiconductor transistor structure, comprising:

• providing a substrate;
• epitaxially forming alternating stacked films over the substrate;
• forming a trench in the alternating stacked films over a first transistor region;
• and
• after forming the trench in the alternating stacked films over the first transistor region, patterning the alternating stacked films over a second transistor region obtaining an alternating stacked fin.

A method for forming a hybrid semiconductor transistor structure, comprising:

• providing a substrate;
• epitaxially forming alternating stacked films over the substrate and in a p-type transistor region and an n-type transistor region;
• forming a trench in the alternating stacked films in the p-type transistor region;
• and
• after forming the trench in the alternating stacked films in the p-type transistor region, patterning the alternating stacked films over the n-type transistor region obtaining an alternating stacked fin.

A method for forming a hybrid semiconductor transistor structure, comprising:

• providing a substrate;
• epitaxially forming alternating stacked films over the substrate;
• forming a trench in the alternating stacked films over a first transistor region;
• filling the trench with a material different from that of the substrate;
• forming a first transistor on the substrate, comprising:
• patterning the material obtaining a fin over the first transistor region, wherein the fin is formed from the material, and the first transistor has a first channel height;
• and
• forming a second transistor on the substrate, comprising:
• patterning the alternating stacked films over a second transistor region obtaining an alternating stacked fin, wherein the first channel height is greater than a separation between the alternating stacked fin and the fin.