Semiconductor structure and fabrication method thereof

Abstract

Semiconductor structure and method for fabricating a semiconductor structure are provided. A substrate including device regions and an isolation region located adjacent to and between the device regions is provided. A fin on the substrate, gate structures across the fin at the device regions, source/drain doped regions in the fin at two sides of each of the gate structures, and a sacrificial gate across the fin at the isolation region are provided. The sacrificial gate and a portion of the fin near a bottom of the sacrificial gate are removed, thus forming a first opening in the fin. An insulation structure in the first opening is formed. Two sides of the sacrificial gate are in contact with the source/drain doped regions at adjacent device regions. A top surface of the insulation structure is flush with or higher than top surfaces of the source/drain doped regions.

Dependencies are inferred from the claim text.