Reverse-conducting insulated gate bipolar transistor

A reverse-conducting semiconductor device comprising:

• a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided above the top surface of the semiconductor chip, covering an area, in which the transistor regions and the diode regions are provided;
• and
• a wiring member having a flat-plate portion having a rectangular-shape, which is metallurgically jointed to the upper-electrode via a joint member above the diode regions;
• wherein
• the transistor regions, each of which has a stripe-shape extending in parallel to the first side in the plan view, implement main current paths for conducting main current in a direction perpendicular to the top surface of the semiconductor chip,
• the diode regions, each of which has a stripe-shape extending parallel to the first side in the plan view, implement flyback paths for conducting reverse current in a direction perpendicular to the top surface of the semiconductor chip, and
• the wiring member has a conductive wall rising from a bending edge of the flat-plate portion in a direction opposite to the upper-electrode, and the bending edge of the flat-plate portion is arranged parallel to the first side.