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US 2019/0355696 A1Published application
3dic structure and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzuan-Horng Liu, Hsien-Wei Chen, Jiun-Heng Wang, Ming-Fa Chen
Life of this patent
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Abstract
A 3DIC structure includes a first die and a second die on a substrate and a bonding die. The boding die is electrically bonded to the first die and the second die. The bonding die covers a portion of a top surface of a scribe region between the first die and the second die.
Claims20
A 3DIC structure, comprising:
- a first die and a second die on a substrate;
- and
- a bonding die electrically bonded to the first die and the second die;
- wherein the bonding die covers a portion of a top surface of a scribe region between the first die and the second die,
- wherein top surfaces of the first die and the second die are partially covered by the bonding die, and a portion of the top surface of the first die and a portion of the top surface of the second die are exposed by the bonding die.
2 more elements
A 3DIC structure, comprising:
- a plurality of dies on a substrate arranged in an array, wherein portions of the substrate are located in scribe regions laterally between the plurality of dies;
- a bonding die across the scribe region and electrically bonded to the plurality of dies;
- a gap fill structure on the plurality of dies and on sides of the bonding die;
- a redistribution layer (RDL) on the gap fill structure, electrically connected to the plurality of the dies through a plurality of through dielectric vias (TDVs),
- wherein the plurality of dies are electrically connected to each other through the bonding die, the TDVs, and the RDL,
- wherein top surfaces of the plurality of dies are partially covered by the bonding die, and portions of the top surfaces of the plurality of dies are exposed by the bonding die and covered by the gap fill structure.
3 more elements
A method of manufacturing a 3DIC structure, comprising:
- bonding a plurality of bonding dies to a plurality of dies in a first region of a wafer, wherein each of the bonding dies is bonded to at least two of the dies;
- forming a gap fill structure on the wafer and on sides of the bonding dies;
- forming a RDL on the gap fill structure, wherein the plurality of dies are electrically connected to each other through the RDL and the bonding dies;
- performing a die saw process on the wafer to separate the plurality of dies in the first region from a second region other than the first region of the wafer,
- wherein top surfaces of the plurality of dies are partially covered by the plurality of bonding dies, and portions of the top surfaces of the plurality of dies are exposed by the plurality of bonding dies and covered by the gap fill structure.
2 more elements
Dependencies are inferred from the claim text.