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US 2019/0355691 A1Published application
Semiconductor Devices Including a Metal Silicide Layer and Methods for Manufacturing Thereof
AssigneeInfineon Technologies AG
InventorsMichael Roesner, Gudrun Stranzl
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Abstract
A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.
Claims19
A semiconductor device, comprising:
- a silicon layer;
- a metal silicide layer disposed directly on the silicon layer;
- and
- a solder layer disposed directly on the metal silicide layer, the solder layer comprising a silicide-forming metal which corresponds to the metal of the metal silicide layer.
1 more element
A method, comprising:
- forming a solder layer on a silicon layer, the solder layer comprising a silicide-forming metal;
- and
- forming a metal silicide layer between the silicon layer and the solder layer, the metal silicide layer being formed from the silicide-forming metal of the solder layer and silicon of the silicon layer.
Dependencies are inferred from the claim text.