Fan-Out Package and Methods of Forming Thereof

A method comprising:

• forming a molding compound laterally encapsulating a chip, a contact pad of the chip being exposed through the molding compound;
• depositing a first dielectric layer over the molding compound and the chip;
• patterning a first opening in the first dielectric layer, the first opening exposing the contact pad, the first opening having a width 2 to 20 times greater than its height;
• forming a first seed layer in the first opening;
• controlling a plating solution and plating additives to plate a first conductive layer on the first seed layer with a plating rate greater than 1 μm per minute;
• forming a second dielectric layer over the first conductive layer and the first dielectric layer;
• forming a second opening in the second dielectric layer exposing the first conductive layer over the first opening;
• and
• forming a second conductive layer overlying the second dielectric layer and physically contacting the first conductive layer through the second opening.

A method comprising:

• forming a molding compound laterally encapsulating a chip, a contact pad of the chip being exposed through the molding compound;
• depositing a first dielectric layer over the molding compound and the chip;
• patterning a first opening in the first dielectric layer, the first opening exposing the contact pad;
• forming a first conductive layer overlying the first dielectric layer and filling the first opening, wherein the first conductive layer in the first opening has a flat surface, wherein the flat surface is vertically further from the chip than a top surface of the first dielectric layer;
• forming a second dielectric layer over the first conductive layer and the first dielectric layer;
• forming a second opening in the second dielectric layer exposing the first conductive layer over the first opening;
• and
• forming a second conductive layer overlying the second dielectric layer and physically contacting the first conductive layer through the second opening.