Power gate circuits for semiconductor devices
AssigneeMicron Technology, Inc.
InventorYasushi Matsubara
Life of this patent
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Abstract
Apparatuses and methods for gate power to circuits of semiconductor devices are described. An example apparatus includes a substrate, a first wiring and a second wiring, and a plurality of transistors. The first wiring may be supplied with a power voltage, and the first wiring is formed over the substrate and is elongating in a first direction. The second wiring may be formed between the substrate and the first wiring, and vertically overlapping the first wiring with the second wiring elongating in the first direction. The plurality of transistors are vertically coupled between the first wiring and the second wiring.
Claims20
An apparatus, comprising:
- a substrate;
- a first wiring supplied with a power voltage, the first wiring being formed over the substrate and elongating in a first direction;
- a second wiring formed between the substrate and the first wiring with vertically overlapping the first wiring, the second wiring elongating in the first direction;
- a plurality of transistors vertically coupled between the first wiring and the second wiring;
- a third wiring formed between the first wiring and the second wiring, the third wiring includes gates of the plurality of vertical transistors.
An apparatus, comprising:
- a plurality of circuit blocks, each circuit block including circuits;
- a first conductive structure configured to be provided a supply voltage;
- a second conductive structure configured to provide power to the circuits of the plurality of circuit blocks;
- a planar structure disposed between the first and second conductive structures;
- and
- a plurality of transistors disposed between the first and second conductive structures and penetrating the planar structure and configured to provide power from the first conductive structure to the second conductive structure when activated, each of the plurality of transistors including a respective gate included in a gate electrode in the planar structure.
An apparatus, comprising:
- a plurality of circuit blocks each circuit block including circuits;
- a structure comprising:
- a first conductive structure configured to be provided a supply voltage;
- a second conductive structure configured to provide power to the circuits of the plurality of circuit blocks;
- and
- a plurality of vertical transistors disposed between the first and second conductive structures and configured to provide power from the first conductive structure to the second conductive structure responsive to a control signal provided to gates of the plurality of vertical transistors;
- wherein the structure overlaps at least a portion of the plurality of circuit blocks.
Dependencies are inferred from the claim text.