Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same

A semiconductor structure, comprising:

• a semiconductor device located on a semiconductor substrate;
• a planarization dielectric layer located on the semiconductor device and over the semiconductor substrate;
• a silicon nitride diffusion barrier layer located on the planarization dielectric layer;
• a via level dielectric layer overlying the silicon nitride diffusion barrier layer;
• and
• a composite contact via structure in contact with a component of the semiconductor device and extending through the planarization dielectric layer, the silicon nitride diffusion barrier layer, and the via level dielectric layer, wherein the composite contact via structure comprises, from bottom to top:
• a lower metallic via structure in contact with the component of the semiconductor device;
• a titanium diffusion barrier structure in contact with a top surface of the lower metallic via structure and contacting the silicon nitride diffusion barrier layer;
• and
• an upper metallic via structure overlying, and electrically contacts the titanium diffusion barrier structure and extending through the via level dielectric layer,
• wherein:
• a top surface of the lower metallic via structure contacts the titanium diffusion barrier structure;
• and
• the top surface of the lower metallic via structure is located between a horizontal plane including a top surface of the silicon nitride diffusion barrier layer and a horizontal plane including a bottom surface of the silicon nitride diffusion barrier layer.