Substrate, method of sawing substrate, and semiconductor device

A semiconductor device comprising:

• a crystalline semiconductor substrate;
• an amorphous region exposed at an outer sidewall of the crystalline semiconductor substrate;
• a dielectric layer on an upper surface of the crystalline semiconductor substrate;
• a partition structure provided in the dielectric layer;
• and
• a protective layer provided on an upper surface of the dielectric layer,
• wherein the dielectric layer exposes at least a portion of an outer sidewall of the partition structure, and
• wherein the protective layer comprises a material different from that of the dielectric layer.

A semiconductor device comprising:

• a crystalline semiconductor substrate;
• an amorphous region in the crystalline semiconductor substrate;
• a dielectric layer on the crystalline semiconductor substrate;
• a partition structure provided in the dielectric layer;
• and
• a protective layer provided on the dielectric layer and comprising a material different from that of the dielectric layer;
• wherein the partition structure has an outer sidewall exposed at an outer sidewall of the dielectric layer, and
• wherein the outer sidewall of the partition structure and an outer sidewall of the crystalline semiconductor substrate are out of alignment.