Microelectronic structures having multiple microelectronic devices connected with a microelectronic bridge embedded in a microelectronic substrate

A microelectronic structure comprising:

• a first microelectronic device, wherein the first microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a second microelectronic device, wherein the second microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a microelectronic bridge attached to the plurality of high density interconnect structures of the first microelectronic device and to the plurality of high density interconnect structures of the second microelectronic device;
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity;
• a first underfill material encapsulating the high density interconnect structures of the first microelectronic device and encapsulating the high density interconnect structures of the second microelectronic device;
• and
• an second underfill material between the first microelectronic device active surface and the microelectronic substrate first surface, between the second microelectronic device active surface and the microelectronic substrate first surface, and within the microelectronic substrate cavity.

A computing device, comprising:

• a board;
• and
• a microelectronic structure attached to the board, wherein the microelectronic structure comprises:
• a reconstituted wafer including a first microelectronic device and a second microelectronic device, wherein the first microelectronic device and the second microelectronic device each include a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a microelectronic bridge attached to the reconstituted wafer, wherein the microelectronic bridge is attached to the plurality of high density interconnect structures of the first microelectronic device and to the plurality of high density interconnect structures of the second microelectronic device;
• and
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity.

A computing device, comprising:

• a board;
• and
• a microelectronic structure attached to the board, wherein the microelectronic structure comprises:
• a first microelectronic device, wherein the first microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a second microelectronic device, wherein the second microelectronic device includes a plurality of high density interconnect structures and a plurality of lower density interconnect structures on an active surface thereof;
• a microelectronic bridge attached to the plurality of high density interconnect structures of the first microelectronic device and to the plurality of high density interconnect structures of the second microelectronic device;
• a microelectronic substrate having a cavity defined therein extending from a first surface of the microelectronic substrate, wherein the plurality of lower density interconnect structures of the first microelectronic device and the plurality of lower density interconnect structures of the second microelectronic device are electrically attached to the first surface of the microelectronic substrate, and wherein the microelectronic bridge extends into the microelectronic substrate cavity;
• a first underfill material encapsulating the high density interconnect structures of the first microelectronic device and encapsulating the high density interconnect structures of the second microelectronic device;
• and
• an second underfill material between the first microelectronic device active surface and the microelectronic substrate first surface, between the second microelectronic device active surface and the microelectronic substrate first surface, and within the microelectronic substrate cavity.