Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same

A method of forming a semiconductor structure, comprising:

• forming semiconductor devices on a semiconductor substrate;
• forming a first dielectric material layer over a portion of the semiconductor devices, wherein a conductive structure selected from a component of the semiconductor devices and a first metal interconnect structure is laterally surrounded by the first dielectric material layer;
• forming a silicon nitride diffusion barrier layer over the first dielectric material layer;
• forming a set of openings through the silicon nitride diffusion barrier layer;
• forming a set of titanium plates in the set of openings, wherein the silicon nitride diffusion barrier layer and the set of titanium plates complimentarily provide a continuous hydrogen diffusion barrier structure extending over the semiconductor substrate, and a titanium plate among the set of titanium plates is formed directly on a top surface the conductive structure;
• and
• forming second metal interconnect structures embedded within a second dielectric material layer over the silicon nitride diffusion barrier layer, wherein one of the second metal interconnect structures is formed on a top surface of the titanium plate among the set of titanium plates.