Beol embedded high density vertical resistor structure

A method of forming a semiconductor structure, the method comprising:

• forming a lower interconnect level that includes at least one first metal-containing structure embedded in a first interconnect dielectric material layer;
• forming a plurality of spaced apart mandrel structures above the lower interconnect level;
• forming a resistor material pillar on opposing sidewall surfaces of each of the mandrel structures;
• removing each mandrel structure;
• forming a dielectric material layer between each resistor material pillar;
• and
• forming an upper interconnect level that includes at least one second metal-containing structure located in a second interconnect dielectric material layer, wherein at least one of the resistor material pillars contacts both the first and second metal-containing structures.