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AssigneeIntegra Technologies, Inc.
InventorWilliam Veitschegger
Estimating the term…
A semiconductor power device including a base plate, a ring frame disposed over the base plate, a semiconductor power die disposed on the base plate and surrounded by the ring frame, an input lead by way the semiconductor power die receives an input signal, wherein the input lead is disposed over a first portion of the ring frame, and an output lead by way an output signal generated by the semiconductor power die is sent to another device, wherein the output lead is disposed over a second portion of the ring frame. The ring frame may be comprised of a relatively high thermal conductivity material, such as beryllium-oxide (Be), silicon-carbide (SiC), diamond, aluminum nitride (AlN), or others. The ring frame produces at least one more heat path between the active region of the semiconductor power die and the base plate so as to reduce the effective thermal impedance.
A semiconductor power device, comprising:
The semiconductor power device of claim 16, wherein the semiconductor power die comprises a field effect transistor (FET), and wherein the set of one or more electrodes comprises a set of one or more source electrodes of the FET, respectively.
A semiconductor power device, comprising:
A gallium-nitride (GaN) on silicon carbide (SiC) high electron mobility transistor (HEMT), comprising:
Dependencies are inferred from the claim text.