Dual-damascene zero-misalignment-via process for semiconductor packaging

A semiconductor package, comprising:

• a buildup film, wherein one or more metal pads are formed in the buildup film;
• a first photoimageable dielectric (PID) layer on the buildup film;
• a second PID layer on the first PID layer;
• and
• a plurality of dual-damascene zero misalignment vias (ZMVs) and a trace between the plurality of dual-damascene ZMVs, wherein the plurality of dual-damascene ZMVs and the trace are disposed in the first and second PID layers, respectively, and wherein the plurality of dual-damascene ZMVs connect with the one or more metal pads in the buildup film.

A semiconductor package, comprising:

• a buildup film, wherein one or more metal pads are disposed in the buildup film;
• a photoimageable dielectric (PID) layer on the buildup film;
• and
• a plurality of dual-damascene zero misalignment vias (ZMVs) and a trace between the plurality of dual-damascene ZMVs, wherein the plurality of dual-damascene ZMVs and the trace are disposed in and on the PID layer, respectively, and wherein the plurality of dual-damascene ZMVs connect with the one or more metal pads in the buildup film.