Semiconductor device and method of making

A semiconductor device comprising:

• an interface between a dielectric layer and a silicon die having a silica surface comprising an adhesion promotor molecule, the adhesion promotor molecule having the structure:
• wherein
• A is chosen from —NR4—, —O—, and —S—,
• R4 is chosen from —H and (C1-C20)hydrocarbyl,
• L is chosen from a bond and (C1-C20)hydrocarbylene,
• SiSD is a silicon atom in the silicon die,
• R1 is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP
• wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom, R2 is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP
• wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom, and R3 is a polymer of the dielectric.

A method of forming a semiconductor device, the method comprising:

• treating a first surface of a silicon die with a surface treatment composition comprising a bifunctional silane to form a silane-functionalized intermediate semiconductor device, the bifunctional silane having the structure,
• wherein
• A is chosen from —NR4—, —OR4, and —SH,
• R4 is independently chosen from —H and (C1-C20)hydrocarbyl,
• L is chosen from a bond and (C1-C20)hydrocarbylene,
• R1 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide,
• R2 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide, and
• R3 is chosen from —H, (C1-C20)hydrocarbyl, —OH, and a halide;
• and
• reacting the silane-functionalized intermediate semiconductor device with a dielectric component, to form the semiconductor device, the semiconductor device having the structure,
• wherein
• A is chosen from —NR4—, —O—, and —S—,
• R4 is chosen from —H and (C1-C20)hydrocarbyl,
• L is chosen from a bond and (C1-C20)hydrocarbylene,
• SiSD is a silicon atom in the silicon die,
• R1′ is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom,
• R2′ is chosen from —H, (C1-C20)hydrocarbyl, —OH, halide, and a crosslink —O-AP wherein AP is another one of the adhesion promotor molecules bonded at the SiA atom,
• R5 is a polymer of the dielectric.