Semiconductor structure
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorFei ZHOU
Life of this patent
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a substrate, including a first region and a second region; a first doped region in the first region of the substrate, the first doped region having first doping ions; a second doped region in the second region of the substrate, the second doped region having second dopant ions with a conductivity type opposite to the first doping ions; a first metallide on a surface of the first doped region having the first doping ions; and a second metallide on a surface of the second doped region having the second doping ions, the second metallide and the first metallide being made of different materials.
Claims11
A semiconductor structure, comprising:
- a substrate, including a first region and a second region;
- a first doped region in the first region of the substrate and having first doping ions;
- a second doped region in the second region and having second doping ions, the second doping ions having a conductivity type opposite to the first doping ions;
- a first metallide on the first doped region having the first doping ions;
- and
- a second metallide on the surface of the second doped region having the second doping ions, the second and first metallides being made of different materials.
Dependencies are inferred from the claim text.