Inverse tone direct print euv lithography enabled by selective material deposition

A semiconductor structure comprising:

• a plurality of vertical fins in a vertical fin pattern, wherein adjacent vertical fins in the vertical fin pattern are all separated by respective wide-open spaces, along a critical dimension, in a low duty cycle of 1:5 or lower.

A method for fabricating a pattern of vertical fins in a semiconductor structure, the method comprising:

• providing a semiconductor material stack including a plurality of layers directly on a semiconductor substrate layer;
• forming an inverse tone direct print pattern in the semiconductor material stack;
• performing vertical directional etching according to the inverse tone direct print pattern to form vertical fins in a vertical fin pattern in the semiconductor substrate layer, wherein the vertical fins in the vertical fin pattern are separated by wide-open spaces, along a critical dimension, in a low duty cycle of 1:5 or lower.