Multi-step insulator formation in trenches to avoid seams in insulators
AssigneeGlobalfoundries Inc.
InventorsAsli Sirman, Jiehui Shu, Chih-Chiang Chang, Huy Cao, Haigou Huang, Jinping Liu
Life of this patent
Estimating the term…
Loading patent…
AssigneeGlobalfoundries Inc.
InventorsAsli Sirman, Jiehui Shu, Chih-Chiang Chang, Huy Cao, Haigou Huang, Jinping Liu
Estimating the term…
Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.
An integrated circuit structure comprising:
An integrated circuit structure comprising:
An integrated circuit structure comprising:
Dependencies are inferred from the claim text.