Method for fabricating a semiconductor device and a semiconductor device

A method of fabricating a semiconductor device, the method comprising:

• providing a semiconductor semi-finished product having a top surface and a bottom surface, the semiconductor semi-finished product having a plurality of mutually adjacent stacked semiconductor devices, wherein the semiconductor devices have a substrate layer with a III-V material or with germanium and the substrate layer being disposed on or near the bottom surface;
• arranging on the substrate layer, a first semiconductor layer of a first conductivity type and arranging on the first semiconductor layer at least one second semiconductor layer of a second conductivity type, wherein the first and second semiconductor layers are formed of a III-V material or consist of a III-V material and the first and second conductivity types are different;
• forming between two immediately adjoining semiconductor devices, a scribe line with a width on the top surface of the semiconductor semi-finished product;
• dicing the semiconductor devices along the scribe line;
• applying to the top surface (102) of the semiconductor semi-finished product, prior to dicing, a mask layer that covers the semiconductor devices and leaves at least a portion of the scribe line uncovered;
• performing, after applying the mask layer, ion implantation for at least partial amorphization and/or insulation, and the ion implantation has at least one implantation step with an energy of at least 500 keV;
• removing the mask layer after the ion implantation;
• dicing the semiconductor devices after the mask layer is removed;
• and
• coating, prior to applying the mask layer, the top surface of the semiconductor semi-finished product via a chemical vapor deposition with a passivation layer having a layer thickness of at least 100 nm.