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US 2019/0355618 A1Published application
Metal interconnect structure and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsDa-Jun Lin, Bin-Siang Tsai
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
Claims20
A method for fabricating semiconductor device, comprising:
- forming a dielectric layer on a substrate;
- forming a trench in the dielectric layer;
- forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy;
- forming a metal layer on the first liner;
- and
- planarizing the metal layer and the first liner to form a metal interconnection.
3 more elements
A semiconductor device, comprising:
- a metal interconnection in a dielectric layer, wherein the metal interconnection comprises:
- a first liner comprising Co—Ru alloy;
- a barrier layer between the dielectric layer and the first liner;
- a second liner between the barrier layer and the first liner, wherein each of the first liner, the barrier layer, and the second liner comprises a U-shape;
- and
- a metal layer on the first liner.
3 more elements
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Dependencies are inferred from the claim text.