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US 2019/0355613 A1Published application
Method of forming film
AssigneeTokyo Electron Limited
InventorHidetami YAEGASHI
Life of this patent
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Abstract
In a method according to an exemplary embodiment, a substrate is prepared in a chamber. A patterned resist mask has been formed on a first region of the substrate. A surface of the substrate in a second region is exposed. A film is formed on the substrate in the chamber by sputtering. The film is formed on the substrate in a manner that particles emitted obliquely downward from a target are caused to be incident onto the substrate.
Claims7
A method of forming a film on a substrate, the method comprising:
- preparing the substrate in a chamber, the substrate having a first region and a second region, a patterned resist mask being formed on the first region, and a surface of the second region being exposed;
- and
- forming the film on the substrate in the chamber by sputtering, in a state where the patterned resist mask exists on the first region,
- wherein the film is formed on the second region and partially formed on the patterned resist mask by causing particles emitted obliquely downward from a target to be incident onto the substrate while a relation between a predetermined direction defined for a pattern of the resist mask and a normal direction of a surface of the target is maintained, without forming the film on a portion of the patterned resist mask hidden in a direction along which the particles are incident onto the substrate.
1 more element
Dependencies are inferred from the claim text.