Back to results
US 2019/0355608 A1Published application
High temperature electrostatic chuck
AssigneeApplied Materials, Inc.
InventorsAbdul Aziz KHAJA, Jun MA, Hyung Je WOO, Fei WU, Jian LI
Life of this patent
Estimating the term…
Abstract
A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.
Claims20
A substrate support comprising:
- a temperature control base;
- a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
- an electrode disposed within the dielectric body;
- and
- a plurality of features formed radially inward of the ledge, wherein the number of features increases radially from a center of the substrate chucking surface to the ledge.
2 more elements
A substrate support comprising:
- a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
- an electrode disposed within the dielectric body;
- a plurality of features formed radially inward of the ledge, wherein the number of features increases radially from a center of the substrate chucking surface to the ledge;
- and
- a seasoning layer formed on the dielectric body which is resistant to degradation from exposure to a processing chemistry.
2 more elements
A substrate support comprising:
- a dielectric body having a substrate chucking surface thereon, the substrate chucking surface partially defined by a ledge formed about a periphery of the dielectric body;
- an electrode disposed within the dielectric body;
- and
- a plurality of features formed on the substrate chucking surface, wherein distribution of the plurality of features is greater at a periphery of the substrate chucking surface than at a central region thereof, and wherein the dielectric body has a resistivity selected in relation to an operating temperature of the substrate support.
1 more element
Dependencies are inferred from the claim text.