US 2019/0355591 A1Published application

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsShunpei YAMAZAKI, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Yukinori SHIMA, Masahiko HAYAKAWA, Takashi HAMOCHI, Suzunosuke HIRAISHI

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

Claims20

Dependent claims

A semiconductor device comprising:

an oxide semiconductor layer and a first electrode overlapping with each other;
an insulating layer between the first electrode and the oxide semiconductor layer, the insulating layer being in contact with the oxide semiconductor layer;
and
a pair of second electrodes in electrical contact with the oxide semiconductor layer,
wherein the insulating layer includes silicon, oxygen, and nitrogen oxide,
wherein the insulating layer includes a portion whose spin density measured by electron spin resonance spectroscopy is greater than or equal to 1×1017 spins/cm3 and less than 1×1018 spins/cm3,
wherein an electron spin resonance spectrum of the portion has a first signal that appears at a g-factor in a range greater than or equal to 2.037 and less than or equal to 2.039, a second signal that appears at a g-factor in a range greater than or equal to 2.001 and less than or equal to 2.003, and a third signal that appears at a g-factor in a range greater than or equal to 1.964 and less than or equal to 1.966, and
wherein the first signal, the second signal, and the third signal are attributed to the nitrogen oxide.

5 more elements

A semiconductor device comprising:

an oxide semiconductor layer and a first electrode overlapping with each other;
a first insulating layer between the first electrode and the oxide semiconductor layer, the first insulating layer being in contact with a first surface of the oxide semiconductor layer;
a second insulating layer in contact with a second surface of the oxide semiconductor layer, the second surface being on a side opposite to the first surface;
and
a pair of second electrodes in electrical contact with the oxide semiconductor layer,
wherein the second insulating layer includes silicon, oxygen, and nitrogen oxide,
wherein the second insulating layer includes a portion whose spin density measured by electron spin resonance spectroscopy is greater than or equal to 1×1017 spins/cm3 and less than 1×1018 spins/cm3,
wherein an electron spin resonance spectrum of the portion has a first signal that appears at a g-factor in a range greater than or equal to 2.037 and less than or equal to 2.039, a second signal that appears at a g-factor in a range greater than or equal to 2.001 and less than or equal to 2.003, and a third signal that appears at a g-factor in a range greater than or equal to 1.964 and less than or equal to 1.966, and
wherein the first signal, the second signal, and the third signal are attributed to the nitrogen oxide.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/524,733Filed 29 Jul 2019
Priority: JP 2013-21324010 Oct 2013
Published: 21 Nov 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10P 95/90
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass: thermal treatments, e.g. annealing…
H10D 30/6704
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
H10D 30/6755
Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
H10D 62/80
Semiconductor bodies, or regions thereof, of devices having potential barriers: characterised by the materials

Family

Application14/505,004Continuation · filed 2 Oct 2014
Application15/584,223Continuation · filed 2 May 2017
Application16/524,733Continuation
US 10,546,759 B2Related patent
US 10,741,414 B2Related patent
US 10,770,310 B2Related patent
US 2015/0102341 A1Published application
US 2017/0236723 A1Published application
US 9,647,128 B2Related patent
US 2019/0355591 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

Building an agent or pulling many patents? Use the API or MCP server instead of scraping pages. Get an API key