Dry Etching Method, Semiconductor Device Manufacturing Method, and Chamber Cleaning Method

Abstract

Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.

Dependencies are inferred from the claim text.