Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

An apparatus for etching a silicon-containing film formed on a substrate, comprising:

• a chamber in which the substrate is accommodated;
• and
• a gas supply part configured to supply both a first fluorine-containing gas and a second fluorine-containing gas onto the silicon-containing film, the first fluorine-containing gas including at least an F2 gas, and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.