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US 2019/0355588 A1Published application
Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsTimothy Tianshyun Yang, Shinya Morikita, Kiyohito Ito, Michiko Nakaya, Masanobu Honda
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Abstract
An etching shape can be suppressed from having non-uniform pattern. A substrate processing method includes burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film; and etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.
Claims11
A substrate processing method, comprising:
- burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film;
- and
- etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.
A substrate processing method, comprising:
- forming a silicon-containing film on a pattern of photoresist formed on a target film;
- forming a recess surrounded by the silicon-containing film on a sidewall of the photoresist by etching the silicon-containing film;
- burying an organic film in the recess surrounded by the silicon-containing film;
- etching the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1;
- and
- removing the organic film,
- wherein the forming of the silicon-containing film, the forming of the recess, the burying of the organic film, the etching of the organic film and the silicon-containing film and the removing of the organic film are all performed in a single processing vessel.
4 more elements
A substrate processing apparatus, comprising:
- a processing vessel;
- a placing table configured to place a substrate thereon within the processing vessel;
- and
- a controller,
- wherein the controller controls:
- burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film;
- and
- etching the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.
5 more elements
Dependencies are inferred from the claim text.