US 2019/0355584 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.

Claims20

Dependent claims

A method of manufacturing a semiconductor device comprising the steps of:

(a) forming a first amorphous film containing hafnium and oxygen;
(b) forming a plurality of grains containing a first element, which is one of aluminum, carbon, nitrogen, fluorine and titanium, on the first amorphous film;
(c) forming a second amorphous film containing hafnium and oxygen on the plurality of grains and on the first amorphous film;
(d) forming a first metal film on the second amorphous film;
and
(e) performing heat treatment after the step (d), thereby crystallizing the first amorphous film to form an orthorhombic first ferroelectric film and crystallizing the second amorphous film to form an orthorhombic second ferroelectric film.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims20