Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising in a following order:

• a MOS structure forming step where a gate electrode is formed on a first main surface side of a semiconductor base substrate with a gate insulation film interposed therebetween and, thereafter, an interlayer insulation film is formed so as to cover the gate electrode;
• a metal layer forming step where a metal layer in a state of being connected with the gate electrode is formed over the interlayer insulation film;
• an electron beam irradiating step where a lattice defect is formed in the inside of the semiconductor base substrate by irradiating an electron beam to the semiconductor base substrate from the first main surface side or a second main surface side in a state where the metal layer is set to a ground potential;
• a metal layer dividing step where the metal layer is divided into a plurality of electrodes;
• and
• an annealing step where the lattice defect in the semiconductor base substrate is repaired by heating the semiconductor base substrate.