Techniques and apparatus for elongation patterning using angled ion beams

A system, comprising:

• a transfer chamber, the transfer chamber arranged to transport a substrate between a plurality of locations;
• a first angled ion beam chamber, the first angled ion beam chamber coupled to the transfer chamber, to direct a first angled ion beam to the substrate;
• a vertical etch chamber, the vertical etch chamber coupled to the transfer chamber, to supply vertical ions to the substrate;
• and
• a second angled ion beam chamber, the second angled ion beam chamber coupled to the transfer chamber, to direct a second angled ion beam to the substrate.

An apparatus, comprising:

• a plasma chamber coupled to receive power from a power supply;
• a process chamber, electrically coupled to the plasma chamber via a bias supply, the process chamber further including a substrate stage;
• an extraction plate, disposed between the plasma chamber and process chamber, and defining an angled ion beam;
• and
• a controller, coupled to at least one of:
• the power supply, the bias supply, and the substrate stage, the controller comprising:
• a processor;
• and
• a memory unit coupled to the processor, including an ion beam control routine, the ion beam control routine operative on the processor to control the angled ion beam, the ion beam control routine comprising an angle control processor to:
• receive an endpoint signal;
• and
• send a control signal to adjust operation of at least one of the power supply, bias supply, and substrate stage, based upon the endpoint signal.