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US 2019/0355580 A1Published application
Semiconductor element and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsToshiki HIKOSAKA, Jumpei TAJIMA, Shinya NUNOUE
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Abstract
According to one embodiment, a semiconductor element includes a first nitride semiconductor region, a second nitride semiconductor region, and an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region. A Si concentration in the intermediate region is not less than 1×1018/cm3 and not more than 1×1019/cm3. A charge density in the intermediate region is 3×1017/cm3 or less.
Claims18
A semiconductor element, comprising:
- a first nitride semiconductor region;
- a second nitride semiconductor region;
- and
- an intermediate region provided between the first nitride semiconductor region and the second nitride semiconductor region,
- a Si concentration in the intermediate region being not less than 1×1018/cm3 and not more than 1×1019/cm3,
- a charge density in the intermediate region being 3×1017/cm3 or less.
3 more elements
A method for manufacturing a semiconductor element, comprising:
- processing a first nitride semiconductor region in an atmosphere including Si;
- performing surface processing of the first nitride semiconductor region after the processing;
- and
- forming a second nitride semiconductor region on the first nitride semiconductor region after the surface processing.
1 more element
Dependencies are inferred from the claim text.