Method to improve film stability

A method, comprising:

• depositing a doped transition metal oxide layer on a first electrode, the doped transition metal oxide layer comprising a dopant;
• annealing the doped transition metal oxide layer in a processing chamber at a chamber pressure greater than about 1 bar and in an ambient environment comprising the dopant;
• and
• depositing a metal layer over the doped transition metal oxide layer.

A method, comprising:

• depositing a carbon-doped nickel (II) oxide layer on a substrate at a first temperature;
• annealing the carbon-doped nickel (II) oxide layer in a processing chamber at a chamber pressure greater than about 1 bar and in a carbon-containing ambient environment;
• and
• depositing a metal layer over the carbon-doped nickel (II) oxide layer at a second temperature greater than the first temperature.