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US 2019/0355539 A1Published application
Radiation window
AssigneeOxford Instruments Technologies Oy
InventorNikolai Chekurov
Life of this patent
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Abstract
According to an example aspect of the present invention, there is provided a method comprising obtaining a first silicon wafer comprising a mask on a first side, attaching a second silicon wafer on the first side of the first silicon wafer, and etching one of the wafers to partially expose a window layer deposited on the opposite silicon wafer and to leave a structure defined by the mask supporting the window layer.
Claims23
A method comprising:
- obtaining a first silicon wafer comprising a mask on a first side;
- attaching a second silicon wafer on the first side of the first silicon wafer, and
- etching one of the wafers to partially expose a window layer deposited on the opposite silicon wafer and to leave a structure defined by the mask supporting the window layer.
A radiation window structure, comprising:
- a continuous window layer on a supporting structure, the supporting structure on a first but not a second side of the window layer,
- wherein the window layer is continuously exposed on the second side and wherein the window layer is partially exposed on the first side, and
- wherein the supporting structure comprises first and second silicon layers with a mask layer between the first and second silicon layers.
A method comprising:
- obtaining a first silicon wafer comprising a silicon oxide layer thereon;
- attaching a second silicon wafer on the first silicon wafer, the second silicon wafer having a window layer deposited thereon, the silicon oxide layer comprising a cavity and the window layer being inserted into the cavity as a result of the attaching, and
- etching through the first silicon wafer to expose the window layer, and etching through the second silicon wafer in accordance with a mask, to construct a support structure for the window layer.
Dependencies are inferred from the claim text.