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US 2019/0355516 A1Published application
Capacitor
AssigneeMurata Manufacturing Co., Ltd.
InventorsTakehito Ishihara, Noriyuki Inoue, Tatsuya Funaki
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Abstract
A capacitor is provided that includes an electrostatic capacitance forming portion with a first electrode/dielectric layer/second electrode structure, and a silicon portion. Moreover, the silicon portion is disposed on at least a part of a side of the electrostatic capacitance forming portion. When the capacitor is viewed in a thickness direction thereof, a region occupied by the silicon portion in a lower portion of the electrostatic capacitance forming portion is 50% or less.
Claims20
A capacitor comprising:
- an electrostatic capacitance forming portion having first and second electrodes with a dielectric layer disposed therebetween;
- and
- a silicon portion disposed on at least a part of a side of the electrostatic capacitance forming portion,
- wherein, when the capacitor is viewed in a thickness direction thereof, the silicon portion occupies a region that is 50% or less of region of a lower portion of the electrostatic capacitance forming portion.
1 more element
A capacitor comprising:
- an electrostatic capacitance component including:
- a first electrode,
- a dielectric layer disposed on the first electrode,
- a second electrode disposed on the dielectric layer,
- a first extended electrode covering at least a portion of the first electrode to define a lower portion of the electrostatic capacitance forming portion, and
- a second extended electrode disposed on an upper portion of the electrostatic capacitance forming portion above the second electrode;
- and
- a silicon layer surrounding at least a portion of the electrostatic capacitance forming portion, such that the silicon layer occupies 50% or less of a region corresponding to the lower portion of the electrostatic capacitance forming portion when the capacitor is viewed in a thickness direction thereof.
5 more elements
Dependencies are inferred from the claim text.