Hybrid power amplifier circuit or system with combination low-pass and high-pass interstage circuitry and method of operating same

A hybrid power amplifier module configured to amplify a first signal component at a fundamental frequency, the hybrid power amplifier module comprising:

• a substrate;
• a first die supported at least indirectly upon the substrate and upon which is formed, at least in part, a preliminary stage amplification circuit that includes a first transistor that is a silicon-based transistor device;
• a second die supported at least indirectly upon the substrate and upon which is formed, at least in part, a final stage amplification circuit that includes a second transistor that is a III-V transistor device made from a semiconductor material selected from gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, and indium antimonide;
• and
• intermediate circuitry supported at least indirectly upon the substrate, the intermediate circuitry coupling the preliminary stage amplification device and the final stage amplification device,
• wherein the intermediate circuitry includes a low-pass circuit and a high-pass circuit, the intermediate circuitry provides a harmonic termination of a second signal component at a harmonic frequency that is a multiple of the fundamental frequency, and the intermediate circuitry does not implement an impedance transformation of the first signal component at the fundamental frequency;
• and
• input pre-matching circuitry supported at least indirectly upon the substrate, the input pre-matching circuitry coupling the intermediate circuitry and the final stage amplification device, wherein the input pre-matching circuitry implements the impedance transformation of the first signal component at the fundamental frequency.

A method of providing amplification, the method comprising:

• providing a hybrid power amplifier module having a preliminary stage amplification device that includes a first transistor that is a silicon-based transistor device, a final stage amplification device that includes a second transistor that is a III-V transistor device made from a semiconductor material selected from gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, and indium antimonide, intermediate circuitry coupling the preliminary stage amplification device and the final stage amplification device, wherein the intermediate circuitry includes a low-pass circuit and a high-pass circuit, and input pre-matching circuitry coupling the intermediate circuitry and the final stage amplification device;
• receiving a RF input signal at the preliminary stage amplification device;
• amplifying the RF signal by way of the preliminary stage amplification device to generate an amplified RF signal having a first component at a fundamental frequency and a second component at a harmonic frequency that is a multiple of the fundamental frequency;
• modifying the amplified RF signal by way of the intermediate circuitry so as to provide a modified amplified RF signal to the input pre-matching circuitry, wherein modifying the amplified RF signal includes harmonically terminating the second component at the harmonic frequency without implementing an impedance transformation of the first signal component at the fundamental frequency;
• further modifying the modified amplified RF signal by way of the input pre-matching circuitry so as to provide a further modified amplified RF signal to the final stage amplification device, wherein further modifying the modified amplified RF signal includes implementing the impedance transformation of the first signal component at the fundamental frequency;
• and
• further amplifying the further modified amplified RF signal so as to generate a RF output signal.