US 2019/0319172 A1 · LIGHT EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract

A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.

Claims20

Dependent claims

A light emitting diode device, comprising:

a light emitting epitaxial layer having opposite first and second surfaces, and including a first type semiconductor layer that defines said first surface, a second type semiconductor layer that defines said second surface, and a light emitting layer that is disposed between said first and second type semiconductor layers and spaced apart from said first and second surfaces, said light emitting layer emitting light toward said first surface to exit therefrom;
and
a plurality of microlenses formed on said first surface and formed of a light transmissible substrate for epitaxial growth of said light emitting epitaxial layer.

A method for manufacturing a light emitting diode device, comprising:

epitaxially growing a light emitting layer on a first type semiconductor layer;
epitaxially growing a second type semiconductor layer on the light emitting layer so that the first and second type semiconductor layers and the light emitting layer cooperatively define a light emitting epitaxial layer having opposite first and second surfaces respectively defined by the first and second type semiconductor layers;
and
forming a plurality of microlenses on the first surface of the light emitting epitaxial layer,
wherein the microlenses are formed of a light transmissible substrate, the light emitting layer emitting light toward the first surface to exit therefrom.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/456,155Filed 28 Jun 2019

Priority

CN 201710057326.126 Jan 2017

Published

17 Oct 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10H 20/84
Constructional details: coatings, e.g. passivation layers or antireflective coatings
H10H 20/855
Packages: optical field-shaping means, e.g. lenses
H10H 20/0133
Having light-emitting regions comprising only Group III-V materials: with a substrate not being Group III-V materials
H10H 20/018
Of bodies, e.g. forming semiconductor layers: bonding of wafers

Light emitting diode device and method for manufacturing the same

Life of this patent

Light emitting diode device and method for manufacturing the same

Life of this patent

Abstract

Claims20