Method for making semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

A method for making a semiconductor device comprising:

• forming a plurality of waveguides on a semiconductor-on-insulator (SOI) substrate;
• forming a superlattice overlying the SOI substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
• forming a plurality of optical modulator regions within the superlattice;
• and
• forming an active device layer on the superlattice comprising at least one active semiconductor device.

A method for making a semiconductor device comprising:

• forming a plurality of waveguides on a substrate;
• forming a superlattice overlying the substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions;
• and
• forming an active device layer on the superlattice comprising at least one active semiconductor device.