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US 2019/0319153 A1Published application
Solar cell including conductive amorphous semiconductor layer and method of manufacturing solar cell
AssigneePanasonic Intellectual Property Management Co., Ltd.
InventorsDaiki WATANABE, Hiroyuki YAMADA, Minato SENO, Akinori TSURUTA
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Abstract
An i-type layer is formed on a side of one surface of a crystalline semiconductor substrate. An n-type layer or a p-type layer is formed on the i-type layer and includes a conductive impurity. A TCO is formed on the n-type layer or the p-type layer. A density in a proximate portion of the n-type layer or the p-type layer closer to the TCO than a remote portion of the n-type layer or the p-type layer is smaller than a density in the remote portion.
Claims6
A solar cell comprising:
- a crystalline semiconductor substrate;
- an intrinsic amorphous semiconductor layer formed on a side of one surface of the crystalline semiconductor substrate;
- a conductive amorphous semiconductor layer formed on the intrinsic amorphous semiconductor layer and including a conductive impurity;
- and
- a transparent conductive film layer formed on the conductive amorphous semiconductor layer, wherein
- a density in a second portion of the conductive amorphous semiconductor layer closer to the transparent conductive film layer than a first portion of the conductive amorphous semiconductor layer is smaller than a density in the first portion.
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A method of manufacturing a solar cell comprising:
- forming an intrinsic amorphous semiconductor layer on a side of one surface of a crystalline semiconductor substrate masked at least in part;
- forming a conductive amorphous semiconductor layer including a conductive impurity on the intrinsic amorphous semiconductor layer;
- and
- forming a transparent conductive film layer on the conductive amorphous semiconductor layer, wherein
- a deposition speed for forming a second portion of the conductive amorphous semiconductor layer closer to the transparent conductive film layer than a first portion of the conductive amorphous semiconductor layer is higher than a deposition speed for forming the first portion.
2 more elements
Dependencies are inferred from the claim text.