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US 2019/0319141 A1Published application
Method for manufacturing cigs thin film for solar cell
AssigneeKorea Institute of Science and Technology
InventorsByoung Koun MIN, Gi Soon PARK, Hyung Suk OH, Yun Jeong HWANG
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Abstract
Methods of manufacturing a CIGS thin film for a solar cell are provided. According to the method, a CIGS thin film having an ideal double band gap grade structure with a large particle size may be obtained by heat-treating a solution-treated CIG oxide thin film by a three-step chalcogenization process. Accordingly, performance of the solar cell may be improved.
Claims18
A method of manufacturing a CIGS thin film for a solar cell, the method comprising:
- first heat-treating a CIG oxide thin film coated on a substrate by a solution process, the heat-treating being performed under an inert gas atmosphere;
- second heat-treating the CIG oxide thin film while supplying a gaseous phase selenium precursor to the CIG oxide thin film, thereby forming a Cu2-xSe (0≤x<1) phase;
- and
- third heat-treating the thin film in which the Cu2-xSe phase is formed under an atmosphere comprising a gaseous phase sulfur precursor, thereby forming a CIGS thin film.
1 more element
Dependencies are inferred from the claim text.