US 2019/0319111 A1 · GROUP IIIA-N HEMT WITH A TUNNEL DIODE IN THE GATE STACK

Abstract

One example provides an enhancement-mode High Electron Mobility Transistor (HEMT) includes a substrate, a Group IIIA-N active layer over the substrate, a Group IIIA-N barrier layer over the active layer, and at least one isolation region through the barrier layer to provide an isolated active area having the barrier layer on the active layer. A gate stack is located between source and drain contacts to the active layer. A tunnel diode in the gate stack includes an n-GaN layer on an InGaN layer on a p-GaN layer located on the barrier layer.

Claims21

Dependent claims

An electronic device, comprising:

a substrate;
a Group IIIA-N active layer on said substrate;
a Group IIIA-N barrier layer on said active layer;
at least one isolation region through said barrier layer to provide at least one isolated active area comprising said barrier layer on said active layer;
a p-GaN layer on said barrier layer;
a tunnel diode comprising a n-GaN layer on an InGaN layer on said p-GaN layer;
a gate over said n-GaN layer;
a drain having a drain contact on said barrier layer to provide contact to said active layer, and
a source having a source contact on said barrier layer to provide contact to said active layer.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/456,040Filed 28 Jun 2019

Priority

4 May 2017

Published

17 Oct 2019

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 30/015
Manufacture or treatment: of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
H10D 30/475
High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]: having wider bandgap layer formed on top of lower bandgap…
H10D 62/343
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: gate regions of…
H10D 84/01
Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers:…

Group iiia-n hemt with a tunnel diode in the gate stack

Life of this patent

Group iiia-n hemt with a tunnel diode in the gate stack

Life of this patent

Abstract

Claims21