Supportive Layer in Source/Drains of FinFET Devices

A semiconductor structure comprising:

• a substrate;
• a fin on the substrate;
• a gate structure over the fin;
• and
• source/drains in the fin on opposing sides of the gate structure, each of the source/drains comprising:
• a bottom layer,
• a plurality of supportive layers over the bottom layer,
• one or more intermediate layers between the plurality of supportive layers;
• and
• a top layer over the plurality of supportive layers, wherein the plurality of supportive layers comprises silicon germanium with an atomic percent content of germanium less than the bottom layers, less than the one or more intermediate layers, and less than the top layer.

A semiconductor structure comprising:

• a fin on a substrate;
• a gate structure over the fin;
• and
• a source/drain in the fin proximate the gate structure, the source/drain comprising:
• a bottom layer comprising p-doped silicon germanium having a first germanium atomic percent content,
• a supportive layer over the bottom layer, and
• a top layer over the supportive layer, the top layer comprising p-doped silicon germanium having a second germanium atomic percent content greater than the first germanium atomic percent content, wherein the supportive layer comprises silicon germanium having a third germanium atomic percent content less than the first germanium atomic percent content of the bottom layer and less than the second germanium atomic percent content of the top layer.