Diode Structure of a Power Semiconductor Device

A power semiconductor device, comprising:

• a semiconductor body coupled to a first load terminal and a second load terminal, wherein the semiconductor body comprises:
• a drift region with dopants of a first conductivity type;
• at least a diode structure configured to conduct a load current between the first and second terminals and comprising an anode port electrically connected to the first load terminal and a cathode port electrically connected to the second load terminal;
• a field stop region with dopants of the first conductivity type at a higher dopant concentration than the drift region, the field stop region being arranged between the cathode port and the drift region;
• an active region and a termination region laterally separating the active region from a lateral edge of the semiconductor body,
• wherein the cathode port comprises:
• first port sections with dopants of the first conductivity type and second port sections with dopants of a second conductivity type complementary to the first conductivity type, a transition between each of the second port sections and the field stop region forming a respective pn-junction that extends along a first lateral direction;
• wherein a first group of the first and second port sections is disposed in the active region, the first group comprising the first port sections arranged alternatingly between the second port sections,
• wherein a second group of the first and second port sections is disposed in the termination region, the second group comprising the first port sections arranged alternatingly between the second port sections, and
• wherein a lateral separation distance between immediately adjacent ones of the second port sections in the second group is greater than in the first group.

A power semiconductor device, comprising:

• a semiconductor body, comprising:
• a drift region with dopants of a first conductivity type;
• a field stop region with dopants of the first conductivity type at a higher dopant concentration than the drift region;
• and
• an active region and a termination region laterally separating the active region from a lateral edge of the semiconductor body,
• wherein the termination region comprises:
• first port sections with dopants of the first conductivity type and second port sections with dopants of a second conductivity type complementary to the first conductivity type, a transition between each of the second port sections and the field stop region forming a respective pn-junction that extends along a first lateral direction, wherein a diffusion voltage of a respective one of the pn-junctions in an extension direction perpendicular to the first lateral direction is greater than a lateral voltage drop laterally overlapping with the lateral extension of the respective pn-junction.

A power semiconductor device, comprising

• a semiconductor body coupled to a first load terminal and a second load terminal,
• wherein the semiconductor body comprises:
• a drift region with dopants of a first conductivity type;
• an anode port electrically connected to the first load terminal a cathode port electrically connected to the second load terminal;
• a field stop region with dopants of the first conductivity type at a higher dopant concentration than the drift region, the field stop region being arranged between the cathode port and the drift region;
• and
• a transition region laterally separating a transistor region from a diode region,
• wherein the transistor region comprises one or more active transistor devices,
• wherein the diode region comprises a diode structure,
• wherein in the transition region and the diode region, the cathode port comprises:
• first port sections with dopants of the first conductivity type and second port sections with dopants of a second conductivity type complementary to the first conductivity type, a transition between each of the second port sections and the field stop region forming a respective pn-junction that extends along a first lateral direction;
• wherein a lateral separation distance between immediately adjacent ones of the second port sections in the diode region is greater than in the transition region.