Semiconductor device and method for producing semiconductor device

A semiconductor device manufacturing method wherein a donor layer is formed on a semiconductor substrate via proton injection, the method being characterized by including:

• a crystal defect formation step of introducing a specific quantity of point defects into the interior of the semiconductor substrate via electron beam irradiation or helium irradiation;
• a proton injection step of performing proton injection multiple times into the interior of the semiconductor substrate;
• and
• a donor layer formation step of performing a first thermal treatment after the proton injection step to form a plurality of the donor layer, which is a composite defect of vacancies, oxygen, and hydrogen, in the through-thickness direction of the semiconductor substrate parallel with and continuously over the entire surface of a one main face of the semiconductor substrate;
• the proton injection being performed multiple times at different acceleration energies;
• the range of the protons determined by the acceleration energy of the proton injection being within the semiconductor substrate;
• and
• the conditions of the first thermal treatment being at a temperature of 350° C. to 550° C., inclusive.