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US 2019/0319048 A1Published application
High-voltage transistor device with thick gate insulation layers
AssigneeGlobalfoundries Inc.
InventorsElliot John Smith, Nigel Chan, Nilesh Kenkare
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Abstract
One illustrative device disclosed herein is formed on an SOI substrate. The transistor device includes a first channel region formed in a semiconductor bulk substrate of the SOI substrate and a first gate insulation layer formed above the first channel region. In one embodiment, the first gate insulation layer includes a part of the buried insulation layer of the SOI substrate and an oxidized part of the semiconductor layer of the SOI substrate.
Claims15
A semiconductor device, comprising
- a semiconductor-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried insulation layer positioned on said semiconductor bulk substrate and a semiconductor layer positioned on said buried insulation layer;
- and
- a first transistor device, wherein said first transistor device comprises a first channel region formed in said semiconductor bulk substrate and a first gate insulation layer formed above said first channel region, said first gate insulation layer comprising a part of said buried insulation layer and an oxidized part of said semiconductor layer.
A semiconductor device, comprising
- a semiconductor-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried insulation layer positioned on said semiconductor bulk substrate and a semiconductor layer positioned on said buried insulation layer;
- a first transistor device and a second transistor device;
- wherein said first transistor device comprises a first channel region formed in said semiconductor bulk substrate, first raised source and drain regions formed on said semiconductor bulk substrate, and a first gate insulation layer formed above said first channel region, wherein said first gate insulation layer comprises at least a part of said buried insulation layer and an oxidized part of said semiconductor layer;
- and
- said second transistor device comprises a second channel region formed in one of said semiconductor bulk substrate and said semiconductor layer, second raised source and drain regions formed on said one of said semiconductor bulk substrate and said semiconductor layer and a second gate insulation layer formed above said second channel region.
2 more elements
A semiconductor device, comprising
- a semiconductor-on-insulator (SOI) substrate comprising a semiconductor bulk substrate, a buried insulation layer positioned on said semiconductor bulk substrate and a semiconductor layer positioned on said buried insulation layer, said buried insulation layer having a first thickness;
- and
- a first transistor device, wherein said first transistor device comprises a first channel region formed in said semiconductor bulk substrate and a first gate insulation layer formed above said first channel region, said first gate insulation layer having a second thickness that is greater than said first thickness.
Dependencies are inferred from the claim text.