Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers;
• performing a heat treatment process for the conductive patterns, within a range from 500° C. to 800° C. under a vacuum atmosphere;
• and
• performing an out-gassing process for removing a gas generated by the heat treatment process.

A method of manufacturing a semiconductor device, comprising:

• forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product;
• generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with a source gas, wherein the generating of the second by-product is performed under an atmosphere in which an N2 gas is injected;
• performing an out-gassing process to remove the second by-product;
• and
• filling the slit with a sealing insulating layer so that he conductive patterns are sealed in the interlayer spaces.